Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

Alpuim P (Autor) Outra; Filonovich SA (Autor) Outra; Costa CM (Autor) Outra; Rocha PF (Autor) Outra; Vasilevskiy MI (Autor) Outra; Lanceros-Mendez S (Autor) Outra; Frias C (Autor) Outra; Torres Marques A (Autor) FEUP; Soares R (Autor) FMUP; Costa C (Autor) Outra

Revista

Título: Journal of Non-Crystalline Solids

Vol. 354

Páginas: 2585-2589

ISSN: 0022-3093

Editora: Elsevier

Indexação

ISI Web of Knowledge - 22 Citações

ISI Web of Science

Scopus - 13 Citações

INSPEC

COMPENDEX

Classificação Científica

CORDIS: Ciências Tecnológicas

Outras Informações

ID Authenticus: P-003-ZSN

DOI: 10.1016/j.jnoncryso1.2007.09.094

Abstract (EN): One common complication following total-hip-replacement arthroplasty - one of the most performed elective surgical procedures - is the loosening of the prosthetic stem and cup, responsible for more than 80% of non-successes. A combination of piezoelectric and piezoresistive materials in a sensing device for dynamical and quasi-static analysis of the implant internal environment is envisaged by the authors. In this paper, thin-film piezoresistive millimeter-long strain sensors fabricated on flexible plastic substrates using n- and p-type hydrogenated nanocrystalline silicon films with gauge factor GF similar to -30 and +20, respectively, are reported. A maximal value of GF = -43 is theoretically predicted for isotropic n-type multicrystalline Si. A sensor consists of an array of piezoresistors, each connected to a Wheatstone bridge-type external circuit, and to the control electronics. A sensitivity of 30 mV/mu m was achieved in sensors bearing both longitudinal and transverse orientations of the resistors relative to the strain direction. Used as a shape sensor the device was able to map the contour of the hip implant. Cell growth tests show that osteoblasts grow faster on P-doped nc-Si:H thin films than on the control sample. Genotoxicity tests show that cell DNA is preserved if cultured in contact with n-type nanocrystalline silicon.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5