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Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon

Title
Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon
Type
Article in International Scientific Journal
Year
2008
Authors
Alpuim P
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Filonovich SA
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Costa CM
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Rocha PF
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Vasilevskiy MI
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Lanceros-Mendez S
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Frias C
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Torres Marques A
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FEUP
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Soares R
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FMUP
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Costa C
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Journal
Vol. 354
Pages: 2585-2589
ISSN: 0022-3093
Publisher: Elsevier
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Publicação em ISI Web of Science ISI Web of Science
Publicação em Scopus Scopus - 13 Citations
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CORDIS: Technological sciences
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Authenticus ID: P-003-ZSN
Abstract (EN): One common complication following total-hip-replacement arthroplasty - one of the most performed elective surgical procedures - is the loosening of the prosthetic stem and cup, responsible for more than 80% of non-successes. A combination of piezoelectric and piezoresistive materials in a sensing device for dynamical and quasi-static analysis of the implant internal environment is envisaged by the authors. In this paper, thin-film piezoresistive millimeter-long strain sensors fabricated on flexible plastic substrates using n- and p-type hydrogenated nanocrystalline silicon films with gauge factor GF similar to -30 and +20, respectively, are reported. A maximal value of GF = -43 is theoretically predicted for isotropic n-type multicrystalline Si. A sensor consists of an array of piezoresistors, each connected to a Wheatstone bridge-type external circuit, and to the control electronics. A sensitivity of 30 mV/mu m was achieved in sensors bearing both longitudinal and transverse orientations of the resistors relative to the strain direction. Used as a shape sensor the device was able to map the contour of the hip implant. Cell growth tests show that osteoblasts grow faster on P-doped nc-Si:H thin films than on the control sample. Genotoxicity tests show that cell DNA is preserved if cultured in contact with n-type nanocrystalline silicon.
Language: English
Type (Professor's evaluation): Scientific
Contact: palpuim@fisica.uminho.pt
No. of pages: 5
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