Influence of Pinholes on MgO-Tunnel Junction Barrier Parameters Obtained from Current-Voltage Characteristics

• Tipo: Artigo em Revista Científica Internacional
• Data: 2010

Autores

ventura, j. (Autor) REIT; teixeira, j. m. (Autor) REIT; araujo, j. p. (Autor) FCUP; sousa, j. b. (Autor) FCUP; Ferreira, R (Autor) Outra; Freitas, PP (Autor) Outra; Langer, J (Autor) Outra; Ocker, B (Autor) Outra; Maass, W (Autor) Outra

Revista

Título: Journal of Nanoscience and Nanotechnology

Vol. 10 Nº 4

Páginas: 2731-2734

ISSN: 1533-4880

Editora: American Scientific Publishers

Indexação

ISI Web of Knowledge - 7 Citações

ISI Web of Science

Scopus - 7 Citações

Classificação Científica

FOS: Ciências exactas e naturais > Física

Outras Informações

ID Authenticus: P-003-7YS

DOI: 10.1166/jnn.2010.1377

Abstract (EN): Magnetic tunnel junctions (MTJs) with thin barriers are already used as read sensors in recording media. However, the presence of pinholes across such few A thick barriers cannot be excluded and one needs to investigate their effect on the MTJ-transport properties. By applying large electrical currents we could change the electrical resistance of the studied MgO MTJs (due to pinhole-size variations), and study how pinholes influence the barrier parameters (thickness t and height phi) obtained by fitting current-voltage characteristics to Simmons' model. We found that, with decreasing resistance, the barrier thickness (height) decreases (increases). These results were well reproduced by a model of parallel-resistances, allowing us to estimate pinhole-free barrier parameters.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4