Você está em:Start > Publications > View > Influence of Pinholes on MgO-Tunnel Junction Barrier Parameters Obtained from Current-Voltage Characteristics
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Freitas, PP
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Langer, J
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Ocker, B
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Maass, W
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Abstract (EN):
Magnetic tunnel junctions (MTJs) with thin barriers are already used as read sensors in recording media. However, the presence of pinholes across such few A thick barriers cannot be excluded and one needs to investigate their effect on the MTJ-transport properties. By applying large electrical currents we could change the electrical resistance of the studied MgO MTJs (due to pinhole-size variations), and study how pinholes influence the barrier parameters (thickness t and height phi) obtained by fitting current-voltage characteristics to Simmons' model. We found that, with decreasing resistance, the barrier thickness (height) decreases (increases). These results were well reproduced by a model of parallel-resistances, allowing us to estimate pinhole-free barrier parameters.
Language:
English
Type (Professor's evaluation):
Scientific
No. of pages:
4
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