Resistive switching in MoSe2/BaTiO3 hybrid structures

• Tipo: Artigo em Revista Científica Internacional
• Data: 2017

Autores

Silva, JPB (Autor) Outra; Almeida Marques, CA (Autor) Outra; Agostinho Moreira, JA (Autor) FCUP; Conde, O (Autor) Outra

Revista

Título: Journal of Materials Chemistry C

Vol. 5

ISSN: 2050-7526

Editora: Royal Society of Chemistry

Indexação

ISI Web of Knowledge - 22 Citações

Scopus - 22 Citações

Outras Informações

ID Authenticus: P-00N-503

DOI: 10.1039/c7tc03024j

Abstract (EN): Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO3 (BTO) and few-layer MoSe2 are combined in a single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiOx/BTO/Au and Al/Si/SiOx/MoSe2/BTO/Au structures and the high quality of the SiOx/MoSe2 interface in the Al/Si/SiOx/MoSe2/Au structure. Al/Si/SiOx/MoSe2/BTO/Au hybrid structures show electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe2/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with a switching ratio of approximate to 10(2) and a stable memory window, which are highly required for memory applications.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 7