Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

• Type: Article in International Scientific Journal
• Date: 2017

Authors

Dias, C (Author) Other; Guerra, LM (Author) Other; Bordalo, BD (Author) Other; Lv, H (Author) Other; Ferraria, AM (Author) Other; Botelho do Rego, AMB (Author) Other; Cardoso, S (Author) Other; Freitas, PP (Author) Other; ventura, j. (Author) FCUP

Journal

Title: Physical Chemistry Chemical Physics

Vol. 19 No. 2

ISSN: 1463-9076

Publisher: Royal Society of Chemistry

Indexing

ISI Web of Knowledge - 9 Citations

Scopus - 8 Citations

Other information

Authenticus ID: P-00M-QZX

DOI: 10.1039/c7cp00062f

Abstract (EN): Resistive switching in metal-insulator-metal nanosctructures is being intensively studied for nonvolatile memory applications. Here, we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with a 30 nm oxide barrier. A forming process was needed to initiate the resistive switching, which was then observed for all Set and Reset voltage polarity combinations. We studied the influence of the voltage polarity on the variability of the Set/Reset voltages and ON/OFF resistances and revealed the importance of a thin TaOx layer working as an oxygen revervoir for resistive switching. The mechanism behind this phenomenon can be understood in terms of conductive filaments formation/rupture with a contribution from Joule heating. Resistance change is thus caused by a voltage-driven oxygen vacancy motion in the MgO layer and a filament model was proposed for each polarity mode. A OFF/ON resistance ratio of at least 2 orders of magnitude was obtained with resistive states stable up to 10(4) s. Our results open the prospect to improve switching performance in other resistive switching systems, by proving a better understanding of the differences between operation modes.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7