Gd-doped LaM nO(3) manganites prepared by the sol-gel technique

• Tipo: Artigo em Revista Científica Internacional
• Data: 2006

Autores

Lopes, Anabela M L M L M L (Autor) Outra; Araújo, João Pedro (Autor) FCUP; Gomes, Angelo M S (Autor) Outra; Mendonça, Tânia Melo (Autor) Outra; Tavares, Pedro B. (Autor) Outra; Correia, J. G. (Autor) Outra; Amaral, V. S. (Autor) Outra

Revista

Título: ADVANCED MATERIALS FORUM II

Vol. 514-516

Páginas: 289-293

Editora: Trans Tech Publications Ltd

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 0 Citações

Outras Informações

ID Authenticus: P-004-NVC

Abstract (EN): To study the phase diagram of low Cd doped LaM nO(3) manganite a structural, electrical and magnetic characterization was performed. In the studied composition range (0 :5 x :5 10%) our results show that La1-xCdxMnO3 compounds have a Rhombohedric symmetry with a unit cell volume smoothly decreasing with increasing Cd. A magnetic and transport study showed that Cd addition up to x <= 0.06 favors ferromagnetism via Double-Exchange (DE) interaction. Above this concentration strong charge localization occurs with a progressive suppression of DE and a corresponding increase of the antiferromagnetic interactions.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5