Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2011

Autores

Pinto, SRC (Autor) Outra; Rolo, AG (Autor) Outra; Buljan, M (Autor) Outra; Chahboun, A (Autor) Outra; Bernstorff, S (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Kashtiban, RJ (Autor) Outra; Bangert, U (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Nanoscale Research Letters

Vol. 6

Páginas: X1-7

ISSN: 1931-7573

Editora: Springer Nature

Indexação

ISI Web of Knowledge - 17 Citações

Scopus - 15 Citações

Outras Informações

ID Authenticus: P-002-SDV

DOI: 10.1186/1556-276x-6-341

Abstract (EN): In this article, we present an investigation of (Ge + SiO(2))/SiO(2) multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250 degrees C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700 degrees C.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 7