Structural, chemical and optical characterisation of Ge-doped SiO2 glass films grown by magnetron rf-sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 1999

Autores

Rolo, AG (Autor) Outra; Conde, O (Autor) Outra; Gomes, MJM (Autor) Outra; dos Santos, MP (Autor) Outra

Revista

Título: Journal of Materials Processing Technology

Vol. 93

Páginas: 269-273

ISSN: 0924-0136

Editora: Elsevier

Indexação

ISI Web of Knowledge - 12 Citações

Scopus - 15 Citações

Outras Informações

ID Authenticus: P-001-3KV

DOI: 10.1016/s0924-0136(99)00165-x

Abstract (EN): Ge nanocrystals embedded in silicon dioxide (SiO2) films were prepared using the magnetron rf-sputtering technique. The films were characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and optical transmission measurements. It was determined from X-ray diffractograms that the Ge particles have a diamond structure. The mean diameter of the nanocrystals was estimated to be between 30 and 80 Angstrom. XPS measurements showed that the Ge nanocrystals were very little oxidised. For the crystalline Ge particles, the size dependence of the Raman spectra of the TO phonon mode was observed. The increase in the line-width and the shift of the peak position to lower frequencies with decrease in their size are explained theoretically from quantum confinement effects of phonons. Optical transmission spectra clearly display a marked blue shift of the edge of the absorption band compared to bulk crystalline Ge, which is attributed to quantum size effects.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5