Post growing annealing effect on the optical, electrical and structural properties of CdSe nanocrystals embedded in silica thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Levichev, S (Autor) Outra; Chahboun, A (Autor) Outra; Rolo, AG (Autor) Outra; Conde, O (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Thin Solid Films

Vol. 517

Páginas: 2538-2540

ISSN: 0040-6090

Editora: Elsevier

Indexação

ISI Web of Knowledge - 7 Citações

Scopus - 8 Citações

Outras Informações

ID Authenticus: P-003-N8S

DOI: 10.1016/j.tsf.2008.11.063

Abstract (EN): In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400 degrees C Evaporation of Se at high temperatures was invoked to explain this phenomenon. Fowler-Nordheim tunnelling mechanism was found to be responsible for carrier transport for samples with bigger CdSe NCs sizes, and which showed better photovoltaic properties.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3