Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

Levichev, S (Autor) Outra; Chahboun, A (Autor) Outra; Basa, P (Autor) Outra; Rolo, AG (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Horvath, ZJ (Autor) Outra; Conde, O (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

A Revista está pendente de validação pelos Serviços Administrativos.

Título: MICROELECTRONIC ENGINEERING

Vol. 85

Páginas: 2374-2377

ISSN: 0167-9317

Indexação

ISI Web of Knowledge - 10 Citações

Scopus - 12 Citações

Outras Informações

ID Authenticus: P-003-TNZ

DOI: 10.1016/j.mee.2008.09.003

Abstract (EN): Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4