Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

• Tipo: Artigo em Revista Científica Internacional
• Data: 2010

Autores

Pinto, SRC (Autor) Outra; Rolo, AG (Autor) Outra; Chahboun, A (Autor) Outra; Buljan, M (Autor) Outra; Khodorov, A (Autor) Outra; Kashtiban, RJ (Autor) Outra; Bangert, U (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Bernstorff, S (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

A Revista está pendente de validação pelos Serviços Administrativos.

Título: MICROELECTRONIC ENGINEERING

Vol. 87

Páginas: 2508-2512

ISSN: 0167-9317

Indexação

ISI Web of Knowledge - 4 Citações

Scopus - 5 Citações

Outras Informações

ID Authenticus: P-003-0QN

DOI: 10.1016/j.mee.2010.06.002

Abstract (EN): In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 degrees C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5