Abstract (EN):
In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 degrees C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.
Idioma:
Inglês
Tipo (Avaliação Docente):
Científica
Nº de páginas:
5