Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

• Tipo: Artigo em Revista Científica Internacional
• Data: 2011

Autores

Vieira, EMF (Autor) Outra; Pinto, SRC (Autor) Outra; Levichev, S (Autor) Outra; Rolo, AG (Autor) Outra; Chahboun, A (Autor) Outra; Buljan, M (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Bernstorff, S (Autor) Outra; Conde, O (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

A Revista está pendente de validação pelos Serviços Administrativos.

Título: MICROELECTRONIC ENGINEERING

Vol. 88

Páginas: 509-513

ISSN: 0167-9317

Indexação

ISI Web of Knowledge - 6 Citações

Scopus - 7 Citações

Outras Informações

ID Authenticus: P-002-SYE

DOI: 10.1016/j.mee.2010.10.016

Abstract (EN): Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800 degrees C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x similar to 0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5