Thin film versus paper-like reduced graphene oxide: Comparative study of structural, electrical, and thermoelectrical properties

• Tipo: Artigo em Revista Científica Internacional
• Data: 2016

Autores

Okhay, O (Autor) Outra; Goncalves, G (Autor) Outra; Tkach, A (Autor) Outra; Dias, C (Autor) Outra; ventura, j. (Autor) FCUP; Ribeiro da Silva, MFR (Autor) Outra; Valente Goncalves, LMV (Autor) Outra; Titus, E (Autor) Outra

Revista

Título: Journal of Applied Physics

Vol. 120

ISSN: 0021-8979

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 11 Citações

Scopus - 12 Citações

Outras Informações

ID Authenticus: P-00K-NZ9

DOI: 10.1063/1.4958956

Abstract (EN): We report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I-V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of similar to 3 x 10(-4) A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar resistance switching, corresponding to memristive behavior of type II, is observed in the I-V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7 x 10(2)S/m and Seebeck coefficient of -6 mu V/degrees C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film. Published by AIP Publishing.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6