Abstract (EN):
Current-in-plane (CIP) transport properties are reported in discontinuous granular layers of CoFe/Al2O3 across a 10 mum gap between lithographed Al contacts, CIP magnetoresistance is found to degrade sensibly with bias voltage V, e.g., from 7% to 3.5% (at room temperature) with V growing from 100 mV to 14 V. The I-V characteristics display a strong non-linear dependence, similar to the high-field tunneling regime known for current-perpendicular-to-plane (CPP) transport, but here it occurs under much weaker electric field and even at room temperature when Coulomb blockade is ruled out. We explain these anomalies by the processes of dynamic charge accumulation under the macroscopic contacts.
Idioma:
Inglês
Tipo (Avaliação Docente):
Científica
Nº de páginas:
4