Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2018

Autores

Filipe C. Correia (Autor) Outra; Joana M. Ribeiro (Autor) Outra; Paulo B. Salvador (Autor) Outra; Alexander Welle (Autor) Outra; Michael Bruns (Autor) Outra; Adélio Mendes (Autor) FEUP; Carlos J. Tavares (Autor) Outra

Revista

Título: Thin Solid Films

Vol. 665

Páginas: 184-192

ISSN: 0040-6090

Editora: Elsevier

Indexação

ISI Web of Knowledge - 2 Citações

ISI Web of Science

Scopus - 2 Citações

INSPEC

Projetos Associados

WINPSC - Novos avanços tecnológicos para a terceira geração de células solares sensibilizadas com perovskita

Outras Informações

ID Authenticus: P-00P-NSC

DOI: 10.1016/j.tsf.2018.09.004

Abstract (EN): This work reports the effect of the applied substrate bias and deposition pressure on the bulk composition, electrical and microstructural properties of Gallium-doped Zinc Oxide thin films deposited by DC magnetron sputtering. In-depth Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy studies were endured to determine the Ga content for the varying process conditions. Experiments confirm that the bulk composition of all films is homogeneous and that an optimized Ga doping of 3.9 at.% is obtained for a substrate bias of -100 V and deposition pressure of 0.51 Pa. It was also verified that films with lower electrical resistivity (2.6 x 10(-3) Omega.cm) have a hexagonal wurtzite structure with [001] preferred crystallographic direction. These transparent conductive oxide thin films have potential applications as electrodes in photovoltaics.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 9