Tackling Polar Response in Oxygen Deficient KTaO3 Thin Films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2014

Autores

Mota, DA (Autor) Outra; Romaguera Barcelay, Y (Autor) Outra; Tkach, A (Autor) Outra; Perez de la Cruz, JP (Autor) Outra; Vilarinho, PM (Autor) Outra; Tavares, PB (Autor) Outra; Agostinho Moreira, JA (Autor) FCUP; Almeida, A (Autor) FCUP

Revista

Título: Ferroelectrics

Vol. 465

Páginas: 44-53

ISSN: 0015-0193

Editora: Taylor & Francis

Indexação

ISI Web of Knowledge - 1 Citação

Scopus - 1 Citação

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia dos materiais

Outras Informações

ID Authenticus: P-009-HWP

DOI: 10.1080/00150193.2014.893804

Abstract (EN): Oxygen deficient KTaO3 thin films were grown by RF magnetron sputtering on Si/SiO2/Ti/Pt substrates. Room temperature X-ray diffraction shows that they are under a compressive strain of 2.3%. Leakage current results reveal the presence of a conductive mechanism, following Poole-Frenkel formalism. The existence of a polar response below T-pol approximate to 367 degrees C was ascertained by dielectric, polarization, and depolarization current measurements. A Cole-Cole dipolar relaxation was evidenced which is associated with oxygen vacancies induced dipoles. After annealing the films in an oxygen atmosphere above T-pol, the aforementioned polar response is suppressed, due to significant oxygen vacancies reduction.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 10