Abstract (EN):
We report the temperature dependence of the electrical resistance (R) of Gd-5(Si0.1Ge0.9)(4) near its (martensitic) magnetostructural transition at T-S similar or equal to 84 K, over different series of 10-300 K thermal cycles (> 50). Large hysteresis is observed near T-S, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (similar to13 - 28) a pre-martensitic phase occurs just below T-S, with the remarkable property of displaying a universal R(T) behavior.
Idioma:
Inglês
Tipo (Avaliação Docente):
Científica
Contacto:
filipcorreia@portugalmail.pt
Nº de páginas:
3