Gd-doped LaM nO(3) manganites prepared by the sol-gel technique

• Type: Article in International Scientific Journal
• Date: 2006

Authors

Lopes, Anabela M L M L M L (Author) Other; Araújo, João Pedro (Author) FCUP; Gomes, Angelo M S (Author) Other; Mendonça, Tânia Melo (Author) Other; Tavares, Pedro B. (Author) Other; Correia, J. G. (Author) Other; Amaral, V. S. (Author) Other

Journal

Title: ADVANCED MATERIALS FORUM II

Vol. 514-516

Pages: 289-293

Publisher: Trans Tech Publications Ltd

Indexing

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Other information

Authenticus ID: P-004-NVC

Abstract (EN): To study the phase diagram of low Cd doped LaM nO(3) manganite a structural, electrical and magnetic characterization was performed. In the studied composition range (0 :5 x :5 10%) our results show that La1-xCdxMnO3 compounds have a Rhombohedric symmetry with a unit cell volume smoothly decreasing with increasing Cd. A magnetic and transport study showed that Cd addition up to x <= 0.06 favors ferromagnetism via Double-Exchange (DE) interaction. Above this concentration strong charge localization occurs with a progressive suppression of DE and a corresponding increase of the antiferromagnetic interactions.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5