Resistive switching in nanostructured thin films

• Type: Article in International Scientific Journal
• Date: 2009

Authors

silva, h. (Author) Other; gomes, h. l. (Author) Other; pogorelov, yu. g. (Author) Other; stallinga, p. (Author) Other; de leeuw, d. m. (Author) Other; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) FCUP; meskers, s. c. j. (Author) Other; kakazei, g. (Author) Other; cardoso, s. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Applied Physics Letters

Vol. 94

Final page: 202107

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 25 Citations

Scopus - 25 Citations

Other information

Authenticus ID: P-003-K2R

DOI: 10.1063/1.3134484

Abstract (EN): Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al(2)O(3) matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 10(4) under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3