Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

• Type: Article in International Scientific Journal
• Date: 2012

Authors

Pinto, S (Author) Other; Krishna, R (Author) Other; Dias, C (Author) Other; Pimentel, G (Author) Other; Oliveira, GNP (Author) Other; Teixeira, JM (Author) FCUP; Aguiar, P (Author) FCUP; Titus, E (Author) Other; Gracio, J (Author) Other; Ventura, J (Author) REIT; Araujo, JP (Author) FCUP

Journal

Title: Applied Physics Letters

Vol. 101

Final page: 063104

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 29 Citations

Scopus - 32 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-002-6ZX

DOI: 10.1063/1.4742912

Abstract (EN): The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by the migration of oxygen groups, depending on the fabrication process. We also show that GO-based structures possess activity-dependent modification capabilities, emphasized by the increase/decrease of device conductance after consecutive voltage sweeps of opposite polarity. Our results allow a better understanding of bipolar RS, towards future non-volatile memories and neuromorphic systems. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742912]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4