Structural and optical studies of CdS nanocrystals embedded in silicon dioxide films

• Type: Article in International Scientific Journal
• Date: 1998

Authors

Rolo, AG (Author) Other; Conde, O (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Thin Solid Films

Vol. 318

Pages: 108-112

ISSN: 0040-6090

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 25 Citations

Scopus - 28 Citations

Other information

Authenticus ID: P-001-83Z

DOI: 10.1016/s0040-6090(97)01175-9

Abstract (EN): Silicon dioxide films doped with nanocrystallites of CdS with a mean radius value in the range of 20 to 40 Angstrom have been grown using the magnetron rf-sputtering technique. We have studied the combined effects of rf-power deposition, the number of semiconductor chips on the SiO2 target, and post-annealing temperature on the CdS crystal size. The optical transmission spectra display a marked blue shift of the absorption band edge of up to 400 meV which was attributed to quantum size confinement effects. The luminescence spectra show a narrow emission peak tentatively explained as being due to the recombination of electrons on shallow donor levels with confined valence band holes. (C) 1998 Elsevier Science S.A.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5