Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Pinto, SRC (Author) Other; Rolo, AG (Author) Other; Buljan, M (Author) Other; Chahboun, A (Author) Other; Bernstorff, S (Author) Other; Barradas, NP (Author) Other; Alves, E (Author) Other; Kashtiban, RJ (Author) Other; Bangert, U (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Nanoscale Research Letters

Vol. 6

Pages: X1-7

ISSN: 1931-7573

Publisher: Springer Nature

Indexing

ISI Web of Knowledge - 17 Citations

Scopus - 15 Citations

Other information

Authenticus ID: P-002-SDV

DOI: 10.1186/1556-276x-6-341

Abstract (EN): In this article, we present an investigation of (Ge + SiO(2))/SiO(2) multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250 degrees C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700 degrees C.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7