Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Buljan, M (Author) Other; Pinto, SRC (Author) Other; Kashtiban, RJ (Author) Other; Rolo, AG (Author) Other; Chahboun, A (Author) Other; Bangert, U (Author) Other; Levichev, S (Author) Other; Holy, V (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Journal of Applied Physics

Vol. 106

ISSN: 0021-8979

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 9 Citations

Scopus - 11 Citations

Other information

Authenticus ID: P-003-F1K

DOI: 10.1063/1.3248373

Abstract (EN): In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si: Ge content. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3248373]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6