Post growing annealing effect on the optical, electrical and structural properties of CdSe nanocrystals embedded in silica thin films

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Levichev, S (Author) Other; Chahboun, A (Author) Other; Rolo, AG (Author) Other; Conde, O (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Thin Solid Films

Vol. 517

Pages: 2538-2540

ISSN: 0040-6090

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 7 Citations

Scopus - 8 Citations

Other information

Authenticus ID: P-003-N8S

DOI: 10.1016/j.tsf.2008.11.063

Abstract (EN): In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400 degrees C Evaporation of Se at high temperatures was invoked to explain this phenomenon. Fowler-Nordheim tunnelling mechanism was found to be responsible for carrier transport for samples with bigger CdSe NCs sizes, and which showed better photovoltaic properties.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3