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Raman study of stress effect on Ge nanocrystals embedded in Al2O3

Title
Raman study of stress effect on Ge nanocrystals embedded in Al2O3
Type
Article in International Scientific Journal
Year
2010
Authors
Pinto, SRC
(Author)
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Rolo, AG
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Chahboun, A
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Kashtiban, RJ
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Bangert, U
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Gomes, MJM
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Journal
Title: Thin Solid FilmsImported from Authenticus Search for Journal Publications
Vol. 518
Pages: 5378-5381
ISSN: 0040-6090
Publisher: Elsevier
Other information
Authenticus ID: P-003-4Q0
Abstract (EN): Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (<10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (>17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.
Language: English
Type (Professor's evaluation): Scientific
No. of pages: 4
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