Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

• Type: Article in International Scientific Journal
• Date: 2010

Authors

Pinto, SRC (Author) Other; Rolo, AG (Author) Other; Chahboun, A (Author) Other; Buljan, M (Author) Other; Khodorov, A (Author) Other; Kashtiban, RJ (Author) Other; Bangert, U (Author) Other; Barradas, NP (Author) Other; Alves, E (Author) Other; Bernstorff, S (Author) Other; Gomes, MJM (Author) Other

Journal

The Journal is awaiting validation by the Administrative Services.

Title: MICROELECTRONIC ENGINEERING

Vol. 87

Pages: 2508-2512

ISSN: 0167-9317

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 5 Citations

Other information

Authenticus ID: P-003-0QN

DOI: 10.1016/j.mee.2010.06.002

Abstract (EN): In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 degrees C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5