Tunneling magnetoresistance in epitaxial discontinuous Fe/MgO multilayers

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Garcia Garcia, A (Author) Other; Pardo, JA (Author) Other; Strichovanec, P (Author) Other; Magen, C (Author) Other; Vovk, A (Author) Other; De Teresa, JM (Author) Other; G.N. Kakazei (Author) REIT; pogorelov, y. g. (Author) FCUP; Morellon, L (Author) Other; Algarabel, PA (Author) Other; Ibarra, MR (Author) Other

Journal

Title: Applied Physics Letters

Vol. 98

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 11 Citations

Scopus - 11 Citations

Other information

Authenticus ID: P-002-T6W

DOI: 10.1063/1.3569149

Abstract (EN): Epitaxial discontinuous Fe/MgO multilayers have been grown by pulsed laser deposition on MgO(001) single-crystal substrates. The multilayers with 0.6 nm nominal Fe layers thickness are superparamagnetic and demonstrate tunneling magnetoresistance (TMR) in the current-in-plane configuration. Increasing deposition temperature causes an improvement in crystal quality and is accompanied by higher TMR ratios. The maximum value (9.2% TMR at room temperature and 18 kOe magnetic field) trebles that of polycrystalline samples deposited simultaneously on glass substrates. A model formula for TMR ratio that includes both spin-dependent tunneling and spin-filtering effect is proposed to explain these results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569149]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3