Probing atomic rearrangement events in resistive switching nanostructures

• Type: Article in International Scientific Journal
• Date: 2010

Authors

ventura, j. (Author) REIT; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) FCUP; Liu, Y (Author) Other; Zhang, Z (Author) Other; Freitas, PP (Author) Other

Journal

Title: Applied Physics Letters

Vol. 96 No. 4

Final page: 043505

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 8 Citations

ISI Web of Science

Scopus - 8 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-003-9P2

DOI: 10.1063/1.3298365

Abstract (EN): Resistive switching in metal-insulator-metal structures is being investigated aiming next generation nonvolatile memories. We studied the time evolution of the electrical resistance (R) of Ta/AlOx/Ta nanostructures displaying resistive switching. At low temperature and in the early switching stages we find rapid R-variations. However, as time proceeds, one sees R-jumps between terraces through different processes, such as discontinuous steps, two level, or dumped fluctuations. Furthermore, a wealth of active fluctuators is visible even after the current leads to no net resistance variations. This is reinforced at high temperatures, where the fluctuating rate and number of active fluctuators lead to complex signals.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3