Electrodeposition of tellurium and on tellurium

• Type: Chapter or Part of a Book
• Date: 2017

Authors

Dzmitry Ivanou (Author) FEUP; Yu. A. Ivanova (Author) Other; G. A. Ragoisha (Author) Other; Yauhen Aniskevich (Author) Other; Pavel Chulkin (Author) Other; E. A. Streltsov (Author) Other

Book

Title: Tellurium: Properties, Uses and Research

Pages: 171-208

ISBN: 978-1-53610-555-1

Publisher: Nova Science Publishers Inc

Other information

Abstract (EN): The chapter focuses on electrochemical deposition of tellurium on n- and p-Si wafers, in porous SiO2 layer on n-Si and in the barrierless template of nanoporous alumina. Electrochemical technique of multilayer assembly from atomic layers of tellurium and metals is presented. Underpotential deposition (upd) of metals and tellurium was used as the electrochemical tool for preparation of atomic layer building blocks in the multilayer assembly. The upd of Pb, Cd, Zn, Bi, In, Sn and Cu on tellurium was characterized by cyclic voltammetry and potentiodynamic electrochemical impedance spectroscopy. The underpotential shift ΔEupd = Eupd − E(Mez+/Me0) in metal adlayer deposition on tellurium has shown a correlation with the free energy of the corresponding metal telluride formation, unlike the underpotential shift in metal adlayer deposition on metal which was known to show a linear correlation with work function differences of the deposited metal and the substrate. This difference was due to a stronger localization of metal adatom interaction with the substrate in the case of tellurium, which was important for the electrochemical control of multilayer assembly.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 38