Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron sputtering

• Type: Article in International Scientific Journal
• Date: 2018

Authors

Filipe C. Correia (Author) Other; Joana M. Ribeiro (Author) Other; Paulo B. Salvador (Author) Other; Alexander Welle (Author) Other; Michael Bruns (Author) Other; Adélio Mendes (Author) FEUP; Carlos J. Tavares (Author) Other

Journal

Title: Thin Solid Films

Vol. 665

Pages: 184-192

ISSN: 0040-6090

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 2 Citations

ISI Web of Science

Scopus - 2 Citations

INSPEC

Associated Projects

WINPSC - Novos avanços tecnológicos para a terceira geração de células solares sensibilizadas com perovskita

Other information

Authenticus ID: P-00P-NSC

DOI: 10.1016/j.tsf.2018.09.004

Abstract (EN): This work reports the effect of the applied substrate bias and deposition pressure on the bulk composition, electrical and microstructural properties of Gallium-doped Zinc Oxide thin films deposited by DC magnetron sputtering. In-depth Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy studies were endured to determine the Ga content for the varying process conditions. Experiments confirm that the bulk composition of all films is homogeneous and that an optimized Ga doping of 3.9 at.% is obtained for a substrate bias of -100 V and deposition pressure of 0.51 Pa. It was also verified that films with lower electrical resistivity (2.6 x 10(-3) Omega.cm) have a hexagonal wurtzite structure with [001] preferred crystallographic direction. These transparent conductive oxide thin films have potential applications as electrodes in photovoltaics.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9