Tackling Polar Response in Oxygen Deficient KTaO3 Thin Films

• Type: Article in International Scientific Journal
• Date: 2014

Authors

Mota, DA (Author) Other; Romaguera Barcelay, Y (Author) Other; Tkach, A (Author) Other; Perez de la Cruz, JP (Author) Other; Vilarinho, PM (Author) Other; Tavares, PB (Author) Other; Agostinho Moreira, JA (Author) FCUP; Almeida, A (Author) FCUP

Journal

Title: Ferroelectrics

Vol. 465

Pages: 44-53

ISSN: 0015-0193

Publisher: Taylor & Francis

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Scientific classification

FOS: Engineering and technology > Materials engineering

Other information

Authenticus ID: P-009-HWP

DOI: 10.1080/00150193.2014.893804

Abstract (EN): Oxygen deficient KTaO3 thin films were grown by RF magnetron sputtering on Si/SiO2/Ti/Pt substrates. Room temperature X-ray diffraction shows that they are under a compressive strain of 2.3%. Leakage current results reveal the presence of a conductive mechanism, following Poole-Frenkel formalism. The existence of a polar response below T-pol approximate to 367 degrees C was ascertained by dielectric, polarization, and depolarization current measurements. A Cole-Cole dipolar relaxation was evidenced which is associated with oxygen vacancies induced dipoles. After annealing the films in an oxygen atmosphere above T-pol, the aforementioned polar response is suppressed, due to significant oxygen vacancies reduction.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 10