Lattice location of implanted Cu in highly doped Si

• Tipo: Artigo em Revista Científica Internacional
• Data: 2000

Autores

Wahl, Ulrich (Autor) Outra; Vantomme, André (Autor) Outra; Langouche, Guido (Autor) Outra; Araújo, João Pedro (Autor) Outra; Peralta, Luís (Autor) Outra; Correia, J. G. (Autor) Outra

Revista

Título: Applied Physics Letters

Vol. 77

Páginas: 2142-2144

ISSN: 0003-6951

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 28 Citações

Scopus - 28 Citações

Outras Informações

ID Authenticus: P-000-YR4

DOI: 10.1063/1.1314876

Abstract (EN): We report on the lattice location of ion-implanted Cu-67 in p(+)- and n(+)-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p(+)- and n(+)-Si. Annealing in the temperature range 200-600 degrees C resulted in changes of near-substitutional Cu to random sites in p(+)-Si, while in n(+)- Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7-2.0 eV for near-substitutional Cu in p(+)-Si and 2.9(2) eV for ideal substitutional Cu in n(+)-Si. (C) 2000 American Institute of Physics. [S0003-6951(00)02640-1].

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3