Lattice site location studies of rare-earths implanted in ZnO single-crystals

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2003

Autores

rita, emc (Autor) Outra; wahl, u (Autor) Outra; lopes, al (Autor) Outra; araujo, jp (Autor) FCUP; correia, jg (Autor) Outra; alves, e (Autor) Outra; soares, jc (Autor) Outra

Ata de Conferência Internacional

Título: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Páginas: 105-110

Symposium on Progress in Semiconductors II - Electronic and Optoelectronic Applications

BOSTON, MA, DEC 02-05, 2002

Indexação

ISI Web of Knowledge - 2 Citações

Scopus - 2 Citações

Outras Informações

ID Authenticus: P-000-KJ2

Abstract (EN): In this work we report on the lattice site location Of Tare earths in single-crystalline ZnO by means of the emission channeling (EC) technique. Following low dose (3x10(13) at/cm(2)) 60 keV ion implantation of the precursor isotope Yb-169, a position-sensitive electron detector was used to monitor the angular distribution of the conversion electrons emitted from Tm-169* as a function of the annealing temperature up to 600degreesC in vacuum. An additional annealing at 800degreesC in flowing O-2 was performed. The EC measurements revealed that around 95-100% of the rare earth atoms occupy substitutional Zn sites up to an annealing temperature of 600degreesC/vacuum. After the 800degreesC/O-2 annealing, the emission channeling effects decreased considerably.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6