Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities

• Tipo: Artigo em Revista Científica Internacional
• Data: 2012

Autores

teixeira, j. m. (Autor) FCUP; ventura, j. (Autor) FCUP; fernandez-garcia, m. p. (Autor) Outra; araujo, j. p. (Autor) FCUP; sousa, j. b. (Autor) Outra; wisniowski, p. (Autor) Outra; leitao, d. c. (Autor) Outra; freitas, p. p. (Autor) Outra

Revista

Título: Journal of Applied Physics

Vol. 111

Página Final: 053930

ISSN: 0021-8979

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 14 Citações

Scopus - 15 Citações

Outras Informações

ID Authenticus: P-002-CEP

DOI: 10.1063/1.3693585

Abstract (EN): We investigate the transport properties of exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy of the CoFeB free layer. Angular dependent measurements of the tunnel conductance (varying the applied magnetic field from the in-plane to the out-of-plane direction) show linear and hysteresis-free switching under low applied magnetic fields, demonstrating a new concept for a reversible in-plane/out-of-plane magnetoresistive sensor. State-of-the-art sensitivities were achieved, and a value of 0.4% TMR/Oe is observed in the direction perpendicular to the tunnel junction plane. An analysis of the anisotropy energies at play is performed based on a Stoner-Wohlfarth like model. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693585]

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4