Four-point probe electrical measurements on p-n-p InP structures

• Tipo: Artigo em Revista Científica Internacional
• Data: 2007

Autores

Sequeira, CAC (Autor) Outra

Revista

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Título: BRAZILIAN JOURNAL OF PHYSICS

Vol. 37

Páginas: 1077-1083

ISSN: 0103-9733

Indexação

ISI Web of Knowledge - 2 Citações

Scopus - 5 Citações

Outras Informações

ID Authenticus: P-004-7MK

DOI: 10.1590/s0103-97332007000700002

Abstract (EN): The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 degrees C. The zinc carrier concentration in the diffused layer was approximately 3 x 10(18) cm(-3) and its mobility was assumed to be about 40 cm(2) V-1 s(-1). It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 7