Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots

• Tipo: Artigo em Revista Científica Internacional
• Data: 2006

Autores

Chahboun, A (Autor) Outra; Baidus, NV (Autor) Outra; Demina, PB (Autor) Outra; Zvonkov, BN (Autor) Outra; Gomes, MJM (Autor) Outra; Cavaco, A (Autor) Outra; Sobole, NA (Autor) Outra; Carmo, MC (Autor) Outra; Vasilevskiy, MI (Autor) Outra

Revista

Título: Physica Status Solidi (A) Applications and Materials

Vol. 203

Páginas: 1348-1352

ISSN: 1862-6300

Editora: Wiley-Blackwell

Indexação

ISI Web of Knowledge - 6 Citações

Scopus - 6 Citações

Outras Informações

ID Authenticus: P-004-M3G

DOI: 10.1002/pssa.200566160

Abstract (EN): We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl4 during the growth leads to the reduction of native defect concentration in the GaAs matrix. This is shown to improve the emission intensity and to remove the quenching effect at room temperature. Some samples were subjected to proton irradiation in order to generate more defects in the matrix. The comparison between the emission from as-grown samples and irradiated ones shows a decrease of the PL intensity with the irradiation dose. However, no change in the activation energy for carrier's thermal escape was observed. The deterioration of the emission properties with the increasing irradiation dose is probably related to traps generated by the irradiation in the matrix, which reduce the overall concentration of the photocarriers.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5