A new approach for physical-based modelling of bipolar power semiconductor devices

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

R. Chibante (Autor) Outra; A. Araújo (Autor) FEUP; A. Carvalho (Autor) FEUP

Revista

Título: Solid-State Electronics

Vol. 52 Nº 11

Páginas: 1766-1772

ISSN: 0038-1101

Editora: Elsevier

Indexação

ISI Web of Knowledge - 14 Citações

ISI Web of Science

Scopus - 15 Citações

COMPENDEX

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia electrotécnica

Outras Informações

ID Authenticus: P-003-VD1

DOI: 10.1016/j.sse.2008.07.006

Abstract (EN): This paper presents a hybrid approach for accurate modelling and simulation of power bipolar semiconductor devices. Model's core is a numerical module that solves ambipolar diffusion equation (ADE) trough a variational formulation followed by an approximate solution with a finite element approach. The approach enables easy implementation of physics-based power semiconductor models into standard SPICE circuit simulators. Implementation is done trough a set of current controlled RC nets describing charge carrier distribution in low-doped zone. Other zones of devices are modelled with classical methods in an analytical module. With this hybrid approach it is possible to describe dynamic and static device behaviour with good accuracy while maintaining low execution times. The methodology is presented and applied for power p-i-n diodes, power bipolar junction transistors and insulated gate bipolar transistors. Models are validated comparing experimental and simulated results.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 7