Highly sensitive thermoelectric touch sensor based on p-type SnOx thin film

• Tipo: Artigo em Revista Científica Internacional
• Data: 2019

Autores

Vieira, EMF (Autor) Outra; Silva, JPB (Autor) Outra; Veltruska, K (Autor) Outra; Matolin, V (Autor) Outra; Pires, AL (Autor) Outra; pereira, a. m. (Autor) FCUP; Gomes, MJM (Autor) Outra; Goncalves, LM (Autor) Outra

Revista

Título: Nanotechnology

Vol. 30

ISSN: 0957-4484

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 15 Citações

Scopus - 17 Citações

Outras Informações

ID Authenticus: P-00Q-YGK

DOI: 10.1088/1361-6528/ab33dd

Abstract (EN): Here, the ability of using p-type tin oxide (SnOx) thin films as a thermal sensor has been investigated. Firstly, the thermoelectric performance was optimized by controlling the thickness of the SnOx film from 60 up to 160 nm. A high Seebeck coefficient of +263 mu V K-1 and electrical conductivity of 4.1 x 10(2) (S m(-)(1)) were achieved in a 60 nm thick SnOx film, due to a compact nanostructured film and the absence of the Sn metallic phase, which was observed for the thicker SnOx film leading to a typical thermoelectric transport properties of a n-type Sn film. Moreover, x-ray photoelectron spectroscopy revealed the co-existence of SnO (79.7%) and SnO2 (20.3%) phases in the 60 nm thick SnOx film, while the optical measurements revealed an indirect gap of 1.8 eV and a direct gap of 2.7 eV, respectively. The 60 nm-SnOx thin film have been tested as a thermoelectric touch sensor, achieving a V-signal/V-noise approximate to 20 with a rise time <1 s. Therefore, this work provides an efficient way for developing highly efficient thermal sensors with potential use in display technologies.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 8