Electrical switching of magnetization in a layer of alpha-Fe with a naturally hydroxidized surface

• Tipo: Artigo em Revista Científica Internacional
• Data: 2016

Autores

Dias, C (Autor) Outra; ventura, j. (Autor) FCUP; araujo, j. p. (Autor) FCUP; G.N. Kakazei (Autor) FCUP; Lupo, P (Autor) Outra; Adeyeye, AO (Autor) Outra; Cardoso, S (Autor) Outra; Polushkin, NI (Autor) Outra; Duarte, AC (Autor) Outra; Conde, O (Autor) Outra; Bundaleski, N (Autor) Outra

Revista

Título: Journal of Materials Chemistry C

Vol. 4

Páginas: 7751-7755

ISSN: 2050-7526

Editora: Royal Society of Chemistry

Indexação

ISI Web of Knowledge - 2 Citações

Scopus - 2 Citações

Outras Informações

ID Authenticus: P-00K-TBR

DOI: 10.1039/c6tc00700g

Abstract (EN): It is well established that electrical methods, such as the application of a high-density (10(10)-10(11) A m(-2)) current, can be employed for the switching of magnetization in thin ferromagnetic films and hetero-structures after their patterning at the nanoscale. We find that magnetization is robustly switchable, i.e., at macroscopic scales (up to a few millimeters in lateral directions), in a single similar to 30 nm-thick layer of alpha-Fe upon discharging a capacitor through the sample. Interestingly, samples sputtered at enhanced base pressures (similar to 10(-6) mbar) exhibited much lower switching thresholds with no bias field, while their electrical conductivity is anomalously high ( higher than that in bulk of alpha-Fe). We argue that the observed enhancement of conduction relates to the mixed oxide/oxyhydroxide (FeO/FeOOH) layer formed naturally on the top of our alpha-Fe films. This provides an explanation for the magnetization switching upon discharging a capacitor in terms of the Oersted field generated by the discharge current. We analyze the ratio needed between the conductions of the FeO/FeOOH layer and the underlying alpha-Fe for the effective action of the Oersted field.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5