A new physics based SPICE model for NPT IGBTs

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2003

Autores

R. Chibante (Autor) Outra; Armando Araújo (Autor) FEUP; Adriano da Silva Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: IECON'03: THE 29TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1 - 3, PROCEEDINGS

Páginas: 1156-1161

29th Annual Conference of the IEEE Industrial-Electronics-Society

Roanoke, VA, NOV 02-06, 2003

Indexação

ISI Web of Knowledge - 5 Citações

Scopus - 11 Citações

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

Outras Informações

ID Authenticus: P-000-JTV

Abstract (EN): A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space holetelectron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6