Transport properties of low resistance underoxidized magnetic tunnel junctions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2007

Autores

ventura, j. (Autor) Outra; ferreira, r. (Autor) Outra; teixeira, j. m. (Autor) Outra; pereira, a. m. (Autor) Outra; araujo, j. p. (Autor) FCUP; pogorelov, y. (Autor) FCUP; sousa, j. b. (Autor) FCUP; freitas, p. p. (Autor) Outra

Revista

Título: IEEE Transactions on Magnetics

Vol. 43

Páginas: 2815-2817

ISSN: 0018-9464

Editora: IEEE

Indexação

ISI Web of Knowledge - 1 Citação

Scopus - 1 Citação

Outras Informações

ID Authenticus: P-004-9QJ

DOI: 10.1109/tmag.2007.893699

Abstract (EN): Magnetic tunnel junctions (MTJs) are currently replacing spin valves as read sensors in high density media. To be implemented, MTJs must have low resistance-area product (R x A) and reasonable tunnel magnetoresistance (TMR) which are usually obtained using ultra-thin barriers. The use of thicker, underoxidized AlOx barriers can also lead to similarly suitable MTJ-characteristics. Here we study the temperature dependence of the transport properties of 9 angstrom underoxidized magnetic tunnel junctions, revealing the dominance of different transport mechanisms in different samples of the same wafer: tunnel, metallic or a mixture of the two, depending on MTJ-magnetic state. Such differences likely arise from slight structural differences inherent to the oxidation process. We further show that the MR-temperature dependence is stronger for MTJs displaying a metallic-like behavior(dR/dT > 0) and compare such behavior with the enhanced MR(T) observed in current perpendicular to the plane (CPP) spin valves.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3