Calibration of MEMS based test structures for predicting thermo-mechanical stress in integrated circuit interconnect structures

• Tipo: Artigo em Revista Científica Nacional
• Data: 2005

Autores

dos Santos, J.M.M. (Autor) Outra

Revista

Título: IEEE Trans. Device and Materials Reliability

Vol. 5 Nº 4

Páginas: 713-719

ISSN: IEEE TDMR

Editora: IEEE Transactions on Device and Material Reliability

Indexação

ISI Web of Science

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Outras ciências da engenharia e tecnologias

CORDIS: Ciências Tecnológicas > Tecnologia > Micro-tecnologia > Micro-sistemas

Outras Informações

Abstract (EN): This paper uses a rotating-beam-sensor structure to show that the extrinsic stress from the mismatch in expansion coefficient between the aluminum and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150°C reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution X-ray-diffraction measurements and these show that the sensor has a resolution better than 2.8 MPa. Furthermore, we have used the sensor to investigate the variation of in-plane stress with the compliance of the intermetal dielectric, by directly comparing sensors fabricated on SiO2 and polyimide layers.

Idioma: Português

Tipo (Avaliação Docente): Científica