Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures

• Tipo: Artigo em Revista Científica Internacional
• Data: 2013

Autores

Sekhar, KC (Autor) Outra; Silva, JPB (Autor) Outra; Kamakshi, K (Autor) Outra; Pereira, M (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Applied Physics Letters

Vol. 102

ISSN: 0003-6951

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 27 Citações

Scopus - 36 Citações

Outras Informações

ID Authenticus: P-006-B25

DOI: 10.1063/1.4809531

Abstract (EN): This work reports the impact of ZnO layer thickness on optical and resistive switching behavior of BaTiO3/ZnO heterostructures grown by pulsed laser deposition. The interface polarization coupling becomes more efficient and causes a remarkable change in heterostructure properties with decrease in ZnO layer thickness. The heterostructure with ZnO thickness of 25 nm displays the enhanced resistive switching characteristics with switching ratio approximate to 10(6) and good stability in low and high resistance states. Moreover, the photoluminescence spectrum exhibits two additional blue emissions when ZnO thickness is <= 50nm and their mechanism is highlighted based on interface band offset and interface polarization coupling effect. (C) 2013 AIP Publishing LLC.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4