Unusual critical behavior of the electrical resistivity near the first-order magneto structural transition of Gd-5(Si0.1Ge0.9)(4)

• Type: Article in International Scientific Journal
• Date: 2004

Authors

Correia, Francisco C. (Author) Other; Araújo, João Pedro (Author) FCUP; Sousa, João Bessa (Author) FCUP; Braga, Melissa E. (Author) Other; Morellón, Luis (Author) Other; Algarabel, Pedro A. (Author) Other; Ibarra, Manuel Ricardo (Author) Other

Journal

Title: Journal of Magnetism and Magnetic Materials

Vol. 272

Pages: 2370-2372

ISSN: 0304-8853

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 2 Citations

Other information

Authenticus ID: P-000-AM0

DOI: 10.1016/j.jmmm.2003.12.1069

Abstract (EN): We report the temperature dependence of the electrical resistance (R) of Gd-5(Si0.1Ge0.9)(4) near its (martensitic) magnetostructural transition at T-S similar or equal to 84 K, over different series of 10-300 K thermal cycles (> 50). Large hysteresis is observed near T-S, with a progressive change in the R(T) behavior and in the residual resistance upon thermal cycling. At intermediate number of cycles (similar to13 - 28) a pre-martensitic phase occurs just below T-S, with the remarkable property of displaying a universal R(T) behavior.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3