Electromigration-driven resistance switching in non-magnetic tunnel junctions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2006

Autores

ventura, j. (Autor) Outra; pereira, a. m. (Autor) FCUP; teixeira, j. m. (Autor) FCUP; carpinteiro, f. (Autor) Outra; araujo, j. p. (Autor) FCUP; sousa, j. b. (Autor) FCUP; liu, y. (Autor) Outra; zhang, z. (Autor) Outra; freitas, p. p. (Autor) Outra

Revista

Título: Journal of Alloys and Compounds

Vol. 423

Páginas: 181-183

ISSN: 0925-8388

Editora: Elsevier

Indexação

ISI Web of Knowledge - 1 Citação

Scopus - 1 Citação

Outras Informações

ID Authenticus: P-004-GHH

DOI: 10.1016/j.jallcom.2005.12.105

Abstract (EN): Current induced switching (CIS) was recently observed in thin magnetic tunnel junctions and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. Here we study the CIS effect in tunnel junctions with a Ta layer deposited just below the insulating barrier. We observe enhanced resistance switching with increasing maximum applied current. Anomalous voltage-current characteristics with negative derivative were observed and this effect is attributed to heating in the tunnel junction. We also observe that, after repeatedly applying large current pulses, the electrical resistance decreases sharply through irreversible steps when ions are displaced into the barrier. (c) 2006 Elsevier B.V. All right reserved.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3