Improving IGBT Behaviour on Short Circuit Conditions

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 1995

Autores

Armando Araújo (Autor) FEUP; António Pina Martins (Autor) FEUP; Adriano Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: Sixth European Conference on Power Electronics and Applications - EPE 95

Páginas: 1831-1835

Sixth European Conference on Power Electronics and Applications - EPE 95

Sevilha, Espanha

Outras Informações

Abstract (EN): The short circuit clearance in IGBT based power converters must be done with gate control such that the maximum current and voltage ratings are not exceeded. Conventional drives, using normal off commutation circuit, usually react fastly to the fault with current commutation time optimised for the normal working frequency of the converter. For inverters in the power range of several tens of kVA the physical disposition of the semiconductors does not allow to continuously reduce the leakage inductance. So this commutation time causes the overdimensioning of the capacitor of the turn off aid circuit, derating the commutation frequency. If the short circuit current is shared between the limiter and the power semiconductor the overvoltage may be reduced enabling the use of a smaller capacitor that benefits the duties and working frequency. This paper presents a drive circuit ruling these characteristics.

Idioma: Português

Tipo (Avaliação Docente): Científica

Nº de páginas: 5