Semiconductors and Devices

Code:

F4029

Acronym:

F4029

Level:

400

Keywords
Classification	Keyword
OFICIAL	Physics

Instance: 2019/2020 - 2S

Active?	Yes
Web Page:	- https://moodle.up.pt/course/view.php?id=338
Responsible unit:	Department of Physics and Astronomy
Course/CS Responsible:	Master in Physics

Cycles of Study/Courses

Acronym	No. of Students	Study Plan	Curricular Years	Credits UCN	Credits ECTS	Contact hours	Total Time
M:F	1	Official Study Plan	1	-	6	42	162
MI:EF	5	study plan from 2017/18	4	-	6	42	162

Teaching language

Suitable for English-speaking students

Objectives

Understand:
i) the physical principles of semiconductor and their conduction processes;
ii) the physical principles of semiconductors devices and their fabrication technology;
iii) theoretical and practical aspects of the major steps in semiconductor device fabrication.

Learning outcomes and competences

After completing the course, the student should be able to:

O1. Knowledge and understanding: understand physical principles of semiconductors and devices; understand conduction processes, fabrication technology and semiconductor device fabrication.

O2. Applying knowledge and understanding:

     a) understand band theory, describe and differentiate band structures of metals, insulators and semiconductors;

     b) apply statistical methods to understand carrier statistics and density in crystalline semiconductors;

     c) understand principles and properties of p-n junction diode functioning and the basics of FET and MOSFET operation;

      d) understand structural and chemical modifications of semiconductor nano-crystals;

     e) understand principles of semiconductor device manufacturing, testing and applications.

O3. Formulate judgments: apply critical thinking in the analysis and discussion of exercises.

O4. Learning skills: conduct self-study through access to educational resources available on the course e-learning Moodle platform of UP.

Working method

B-learning

Program

1. Semiconductor physics.


2. Energy bands and carrier concentration.


3. Carrier transport phenomena.


4. Intrinsic and extrinsic semiconductors.


5. Degenerate and nondegenerate semiconductors.


6. 
   
   Structural and chemical modifications of semiconductor nano-crystals.
   
   


7. Diodes. p-n Junction.


8. Unipolar and bipolar devices.


9. Transistors. FET, NFET and PFET.


10. The MOSFET.


11. Single crystal growing processes: Czochralski and float zone.


12. Cleaning, texturing and etching processes.


13. Applications.

Mandatory literature

Anderson, B., Anderson, R.; Fundamentals of Semiconductor Devices, McGraw-Hill, 2005
Davies, J.; The Physics of Low-dimensional Semiconductors: An Introduction, Cambridge University Press, 2000
Lutz, J., Schlangenotto, H.; Lutz, Semiconductor Power Devices: Physics, Characteristics, Reliability., Springer-Verlag, 2011
Bar-Lev, A.; Semiconductors and Electronic Devices, Prentice-Hall, 1993
Seixas, T. M.; Course Notes in Semiconductors and Devices, 2016
Victor I. Klimov; Semiconductor and Metal Nanocrystals: Synthesis and Electronic and Optical Properties

Complementary Bibliography

Matthew D. McCluskey; Dopants and Defects in Semiconductors, Taylor & Francis Group , 2018

Teaching methods and learning activities

B-LEARNING. 

Subject´s presentation will be held in lectures, predominantly expository with PP. These lecture classes will provide a strong interaction between semiconductor physics concepts and devices.

Seminar classes are designed to review general concepts from lectures and to solve and discuss problems under instructor’s guidance.

Questions/problem sets will be made available on Moodle_UP platform. Students should, individually, submit their solutions on scheduled dates and give a presentation to discuss their content. The questions/problems will cover lectures’ materials.

Writing of an individual essay based on bibliographic research and having as subject one of the topics covered or related to the course content. The main goal of the written essay task is the application of acquired knowledge, the critical review of current scientific works, published in high impact scientific journals. This process aims at the development of analysis capabilities for new scenarios.

In addition to face to face lectures and seminar classes, didactic contents will be made available on Moodle-UP Platform.

keywords

Physical sciences > Physics > Condensed matter properties > Physics of semiconductors

Evaluation Type

Distributed evaluation with final exam

Assessment Components

designation	Weight (%)
Exame	35,00
Trabalho escrito	35,00
Trabalho prático ou de projeto	30,00
Total:	100,00

Amount of time allocated to each course unit

designation	Time (hours)
Apresentação/discussão de um trabalho científico	5,00
Estudo autónomo	60,00
Frequência das aulas	42,00
Trabalho de investigação	40,00
Trabalho escrito	15,00
Total:	162,00

Eligibility for exams

According to FCUP rules.

Calculation formula of final grade

The final grade (CF) will be determined according to the following weights:

CF = 35%E + 35%TE + 30%PA_A

CF: final grade

E: final exam

TE: written essay

PA_A: Questions/problem sets + Presentation

If the final grade ≥ 10 then the student passes.

Final grade between 0 and 20.

Classification improvement

According to the “Regulamento de Avaliação do Aproveitamento dos Estudantes da FCUP”.

Exam.

The student can only improve the exam grade.

Observations

Any omissions and/or questions regarding this form will be resolved by the course’s instructor.

The jury can demand that any student takes an additional written and/or oral examination.

Jury:
Teresa M Seixas
André Pereira