Two-terminal Resistive-switching Memories based on Liquid AgNO3 as Artificial Synapses

• Type: Article in International Scientific Journal
• Date: 2022

Authors

Silva, A (Author) Other; Dias, C (Author) FCUP; ventura, j. (Author) FCUP

Journal

Title: U.Porto Journal of Engineering

Vol. 8 No. 2

Pages: 29-34

Publisher: Universidade do Porto. Faculdade de Engenharia

Indexing

Scopus - 29 Citations

Other information

Authenticus ID: P-00W-NTY

DOI: 10.24840/2183-6493_008.003_0007

Abstract (EN): The brain presents impressive characteristics, like memory retention and learning capabilities at low energy consumption, making it the most efficient computational entity known. A promising candidate for the task of mimicking the brain is a new generation of devices showing resistive switching, a process that resembles the synaptic behavior, namely the liquid-based resistive-switching memory (LRSM). Here we present a two-terminal structure that works based on a solution of silver nitrate (AgNO3) and a silver (Ag) electrode. Furthermore, since the goal is to mimic the behavior of synapses, the dynamical properties of resistive switching, endurance and data retention were studied. Low operation power was further achieved (<0.5 V, 0.1 mA). Finally, taking advantage of the liquid medium, in which the synaptic behavior occurs, a flexible device was built using microchannels in Polydimethylsiloxane (PDMS) that allowed for the harvesting of the silver nitrate and the insertion of a silver and copper electrode. © 2022, Universidade do Porto - Faculdade de Engenharia. All rights reserved.

Language: English

Type (Professor's evaluation): Scientific