Spin-dependent migration-conduction model for ultra-thin magnetic tunnel junctions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2007

Autores

Yu. G Pogorelov (Autor) Outra; Lopes, JV (Autor) Outra; Ventura, JO (Autor) Outra; Freitas, PP (Autor) Outra; Ferreira, R (Autor) Outra; Araujo, JP (Autor) FCUP; Sousa, JB (Autor) FCUP

Revista

Título: Journal of Magnetism and Magnetic Materials

Vol. 316

Páginas: E957-E959

ISSN: 0304-8853

Editora: Elsevier

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 0 Citações

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia dos materiais

Outras Informações

ID Authenticus: P-004-7XK

DOI: 10.1016/j.jmmm.2007.03.152

Abstract (EN): Magnetic-tunnel junctions MTJs with ultra-thin (similar to 6-9 angstrom) oxide barriers, having the resistance-area product as low as 1-10 Omega mu m(2), and magnetoresistance as high as similar to 20%, were studied. In the temperature range from 300 to 25 K, they display resistance combined between metallic and activated laws. Under applied currents from 0.1 to 10 mA, the dynamic conductance varies from chaotic to periodic regimes, and the noise power spectrum over times from 10 ms to 10(5) s shows a crossover from 1/f(2) to 1/f behavior, all the features being different for parallel (P) and antiparallel (AP) magnetization of electrodes. A theoretical model is proposed, combining electron tunneling through localized defect states in the barrier and migration of respective defect atoms. A qualitative agreement with the experimental noise spectrum is achieved.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3